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APTM120DSK57T3G
Dual Buck chopper MOSFET Power Module
13 14 Q1 18 22 19 CR1 23 8 CR2 7 10 Q2 11
VDSS = 1200V RDSon = 570m typ @ Tj = 25C ID = 17A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single buck of twice the current capability * RoHS Compliant
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120DSK57T3G- Rev 1 July, 2006
Max ratings 1200 17 13 68 30 684 390 22 50 3000
Unit V A V m W A
APTM120DSK57T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
570 3
Max 250 1000 684 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 17A, R G = 5
Min
Typ 5155 770 130 187 24 120 20 15 160 45 990 685 1565 857
Max
Unit pF
nC
ns
J
J
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 25A VR = 600V
di/dt =1000A/s
Min 1200
Typ
Max 250 500
Unit V A A V ns C
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
IF = 25A VGE = 0V
25 2.1 1.9 95 190 2.3 4.5
Tj = 125C Tj = 25C Tj = 125C
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APTM120DSK57T3G- Rev 1 July, 2006
APTM120DSK57T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM120DSK57T3G- Rev 1 July, 2006
17
28
APTM120DSK57T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.3
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 50
V GS=15, 10 & 8V
Transfert Characteristics 80 70 ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
40 30 20 10 0 0 5 10 15 20
7V 6.5V
60 50 40 30 20 10 0
TJ=25C T J=125C T J=-55C
6V
5.5V 5V
25
30
0
1
2
3
4
5
6
7
8
9
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 8.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 16 12 8 4 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
V GS=10V VGS=20V
10
20
30
40
25
50
75
100
125
150
APTM120DSK57T3G- Rev 1 July, 2006
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM120DSK57T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC)
APTM120DSK57T3G- Rev 1 July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=8.5A
100
100s limited by RDSon 1ms 10ms
10
1
Single pulse TJ =150C TC=25C 1 1200 10 100 1000 VDS , Drain to Source Voltage (V)
0
Gate Charge vs Gate to Source Voltage I D=17A TJ=25C
V DS=240V VDS=600V V DS =960V
10000
Ciss
1000
Coss
Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM120DSK57T3G
Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 100 80 60 40 20 0 5 10 15 20 25 30 35 I D, Drain Current (A) Switching Energy vs Current 0 5 10 15 20 25 I D, Drain Current (A) 30 35
V DS=800V RG =5 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=800V RG=5 TJ=125C L=100H
t d(off) 60
tf
tr and tf (ns)
120
40 tr 20
td(on)
Switching Energy vs Gate Resistance 4
VDS=800V ID=17A TJ=125C L=100H
3
Switching Energy (mJ) Switching Energy (mJ)
2.5 2 1.5 1 0.5 0 5
V DS=800V RG=5 T J=125C L=100H
Eon Eoff
Eoff
3
2 1 Eoff
Eon
0
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I D, Drain Current (A) Operating Frequency vs Drain Current 200 175
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
225
1000
Frequency (kHz)
150 125 100 75 50 25 0 4 6
VDS=800V D=50% RG=5 T J=125C T C=75C
ZCS ZVS
100
T J=150C
10
T J=25C
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APTM120DSK57T3G- Rev 1 July, 2006
8 10 12 14 ID, Drain Current (A)
16
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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